|
|
|
| Experimental Investigation on Triggering and Conducting Characteristic of High Power Semiconductor Switch RSD |
| Zhou Jingzhi, Wang Haiyang, He Xiaoping, Chen Weiqing, Guo Fan, Qiu Aici |
| Northwest Institute of Nuclear Technology Xi’an 710024 China |
|
|
|
|
Abstract High power semiconductor switch reversly switched-on dynistor(RSD) is one of the semiconductor devices with the largest conductive current capability, and features high d#em/em#/dt and low power dissipation. Trigger parameters are main factors which have considerable impact on conducting state of RSD. Influence of different amplitudes and pulse widths of trigger current on conducting state is investigated by experiments. Curves of peak switching voltage of RSD as a function of trigger charge with four different pulse widths of trigger current, 2μs, 1μs, 500ns and 250ns are obtained, and cause of ununiform switching under 250ns pulse width is discussed. It’s shown that proportion factor in critical trigger charge equation increases with trigger pulse width increment.
|
|
Received: 12 August 2010
Published: 20 March 2014
|
|
|
|
|
|
[1] Balyaev S A, Bezeglov V G, Chibirkin V V, et al. New generation of high-power semiconductor closing switches for pulsed power applications[C]. Proceedings of the IEEE 28th International Conference of Power Intergrated Grid, 2007: 1525-1528.
[2] Grekhov I V. New principles of high power switching with semiconductor devices[J]. Solid-State Electronics, 1989, 32(11) : 923-930.
[3] Savage M E. Final Results from the high-current, high-action closing switch test program at Sandia national laboratories[J]. IEEE Transactions on Plasma Science, 2000, 28(5): 1451-1455.
[4] Grekhov I V, Kozlov A K, Korotkov S V. High power RSD generator for pumping excimer lasers[J]. Instruments and Experimental Techniques, 1996, 39(3): 423-426.
[5] Wang Haiyang, He Xiaoping, Chen Weiqing, et al. A high current high di/dt pulse generator based on reverse switching dynistor[J]. IEEE Transactions on Plasma Science 2009, 37(2): 356-358.
[6] 何小平, 王海洋, 周竞之, 等. 12kV高压反向触发双极晶闸管开关组件[J]. 强激光与粒子束, 2010, 22(4): 803-806.
He Xiaoping, Wang Haiyang, Zhou Jingzhi, et al. 12kV high voltage reversly switched dynistor assembly[J]. High Power and Particle Beams, 2010, 22(4): 803-806.
[7] Grekhov I V, Kozlov A K, Korotkov S V. Submicrosecond RSD generator pumping pulsed lasers[J]. Instruments and Experimental Techniques, 1996, 39(3): 419-422.
[8] Gorbatyuk A V, Grekhov I V, Nalivkin A V, et al. Theory of qusi-diode operation of reversly switched dinistors[J]. Solid-State Electronics, 1988, 31(10): 1483-1491.
[9] 杜如峰, 余岳辉, 胡乾, 等. 预充电荷对RSD开通特性的影响[J]. 电力电子技术, 2003, 37(5): 84-86.
Du Rufeng, Yu Yuehui, Hu Qian, et al. Influence of pre-charge upon RSD turn on character[J]. Power Electronics, 2003, 37(5): 84-86.
[10] Korotkov S V. Switching possibilities of reversly switched-on dynistors and principles of RSD circuitry[J]. Instruments and Experimental Techniques, 2002, 45(4): 437-470. |
|
|
|
2012, Vol. 27 
