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| Three-Level Driving Method for GaN Power Transistor |
| Ren Xiaoyong1,David Reusch2,Ji Shu2,Mu Mingkai2,Fred C Lee2 |
1. Jiangsu Key Laboratory of New Energy Generation and Power Conversion,Nanjing University of Aeronautics and Astronautics Nanjing 210016 China
2.Virginia Polytechnic Institute and State University,Blacksburg VA 24061 USA |
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Abstract As a typical representative of the 3rd generation wide band-gap semiconductor materials,the gallium nitride(GaN) has many outstanding performance which silicon do not have. It is especially good for high frequency,high pressure,high temperature and high power applications,and it is applicable both in the industry and the military fields. With the advances in GaN technology,large-diameter silicon(Si)-based GaN epitaxial technology matures to the business direction. Since 2010,several manufacturers have introduced the GaN power transistor devices. Similar with the MOSFET,a reasonable driving method for GaN power transistor is critical for the performance improvement in circuit applications. This paper proposes a three level(TL) driving method for GaN power devices in synchronous rectification Buck converter. As verified by both simulation and experimental results,the proposed driving method works well. Since it can reduce the voltage drop of reverse conduction during the controlling dead time application,and the converter efficiency can be improved and higher frequency more benefit.
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Received: 10 August 2011
Published: 11 December 2013
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2013, Vol. 28 
