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| Accurate Measurement and Research for On-State Peak Voltage Drop of Reversely Switched Dynistor |
| Shang Chao1, 2, Liang Lin, Feng Renwei1, Liu Xueqing1 |
| 1. Huazhong University of Science and Technology Wuhan 430074 China 2. Qingdao University Qingdao 266071 China |
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Abstract The accurate measurement in parallel resistance to on-state peak voltage drop is designed based on the special principle of RSD. The measurement principle and process of on-state peak voltage drop is introduced, and the parameter of RSD circuit is confirmed. The experimental results show that the on-state peak voltage drop of RSD with diameter 16mm is 8.0V under the pulse current of 1.2kA(pulse width is about 17.5μ s). Besides, the on-state peak voltage drop of RSD is increased with the increase of peak current, and the ratio of two resistances has no significant impact on the measurement results.
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Received: 01 December 2009
Published: 07 March 2014
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[1] Heesch E J M, Yan K, Pemen A J M, et al. Matching repetitive pulsed power to industrial processes[J]. IEEE Transactions on FM, 2004, 124(7): 607-611.
[2] 邵涛, 袁伟群, 孙广生, 等. 常压下重频纳秒脉冲气体放电试验研究[J]. 中国电机工程学报, 2005, 25(8): 161-166.
[3] 李维波, 毛承雄, 李启炎, 等. 神光& #x02162; 强激光能源模块测量线圈研究[J]. 中国电机工程学报, 2003, 23(5): 53-57.
[4] Grekhov I V. Theory of quasi-diode operation of reversely switched dynistors[J]. Solid-state Electronics, 1988, 31(10): 1483-1491.
[5] Korotkov S V. Switching possibilities of reverse switched-on dynistors and priciples of RSD circuitry (review)[J]. Instruments and Experimental Techniques, 2002, 45(4): 437-470.
[6] Grekhov I V, Kozlov A K, Korotkov S V, et al. High-voltage RSD switches of submegaampere current pulses of microsecond duration[J]. Instruments and Experimental Techniques, 2003, 46(1): 48-53.
[7] Grekhov I V, Mesyats G A. Physical basis for high-
power semiconductor nanosecond opening switched[J]. IEEE Transaction on Plasma Science, 2000, 28(5): 1540-1544.
[8] 余岳辉, 梁琳, 李某涛, 等. 超高速半导体开关RSD的开通机理与大电流特性研究[J]. 电工技术学报, 2005, 20(2): 36-40.
[9] 杜如峰, 余岳辉, 胡乾, 等. 预充电荷对RSD开通特性的影响[J]. 电力电子技术, 2003, 37(5): 84-86.
[10] 维捷斯拉夫& #x000b7; 本达, 约翰& #x000b7; 戈沃, 邓肯 A& #x000b7; 格兰特. 功率半导体器件理论及应用[M]. 北京: 化学工业出版社, 2005.
[11] Gregor G. Investigation of the possibility to build a 400kA pulse current generator to drive a magnetic horn[C]. Switzerland: European Organization for Nuclear Research, 2000. |
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2011, Vol. 26 
