Computing Method for Partial Inductance of Cylindrical Busbar Conductor
Liu Xin1, Wang Litong1, Liang Guishu1, Qi Lei2
1. Department of Electrical Engineering North China Electric Power UniversityBaoding 071003 China; 2. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China
Abstract：In the high voltage and high power converter, high voltage DC circuit breaker, etc., the large cylindrical conductor is widely used in conjunction with the press pack devices. The stray inductance of busbar brings strong electromagnetic interference during the turn on/off process of the switch device. Thus, the accurate calculation and optimization for the stray inductance are indispensable parts for the electromagnetic compatibility design of the equipment. Based on the theory of partial element equivalent circuit, a method of calculating the partial inductance for large cylindrical conductor is proposed in this paper. Different from the rectangular and triangle enmeshment methods, this method gives full consideration to the symmetry characteristics of circular cross section in cylindrical conductor and divides the conductor into round tubular elements. Besides, this method overcome the limitation for the conductor size (the length of the conductor is greater than the diameter of the cross section) in the existing calculation method based on the round tubular enmeshment and has general applicability. Finally, some examples are provided and the advantages of high accuracy and efficiency are verified.
[1] 刘尚合, 刘卫东. 电磁兼容与电磁防护相关研究进展[J]. 高电压技术, 2014, 40(6): 1605-1613. Liu Shanghe, Liu Weidong.Progress of relevant research on electromagnetic compatibility and electro- magnetic protection[J]. High Voltage Engineering, 2014, 40(6): 1605-1613. [2] 孔德宏, 李崇坚, 朱春毅, 等. IGCT-NPC/H桥型变流器换流过程研究[J]. 电工技术学报, 2014, 29(6): 169-175. Kong Dehong, Li Chongjian, Zhu Chunyi, et al.Research on IGCT-NPC/H bridge converter com- mutation process[J]. Transactions of China Electro- technical Society, 2014, 29(6): 169-175. [3] 朱义诚, 赵争鸣, 王旭东, 等. SiC MOSFET与SiC SBD换流单元瞬态模型[J]. 电工技术学报, 2017, 32(12): 58-69. Zhu Yicheng, Zhao Zhengming, Wang Xudong, et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69. [4] 易荣, 赵争鸣. 受杂散电感影响的大容量变换器中IGCT关断特性研究[J]. 中国电机工程学报, 2007, 27(31): 115-120. Yi Rong, Zhao Zhengming.Research on the turn-off characteristic of IGCT influenced by the stray inductance in high power inverters[J]. Proceedings of the CSEE, 2007, 27(31): 115-120. [5] 柯俊吉, 赵志斌, 谢宗奎, 等. 考虑寄生参数影响的碳化硅MOSFET开关暂态分析模型[J]. 电工技术学报, 2018, 33(8): 1762-1774. Ke Junji, Zhao Zhibin, Xie Zongkui, et al.Analytical switching transient model for silicon carbide MOSFET under the influence of parasitic parame- ters[J]. Transactions of China Electrotechnical Society, 2018, 33(8): 1762-1774. [6] 刘盛福, 常垚, 李武华, 等. 压接式IGBT模块的动态特性测试平台设计及杂散参数提取[J]. 电工技术学报, 2017, 32(22): 50-57. Liu Shengfu, Chang Yao, Li Wuhua, et al.Dynamic switching characteristics test platform design and parasitic parameter extraction of press-pack IGBT modules[J]. Transactions of China Electrotechnical Society, 2017, 32(22): 50-57. [7] 钱照明, 陈恒林. 电力电子装置电磁兼容研究最新进展[J]. 电工技术学报, 2007, 22(7): 1-11. Qian Zhaoming, Chen Henglin.State of art of electromagnetic compatibility research on power electronic equipment[J]. Transactions of China Electrotechnical Society, 2007, 22(7): 1-11. [8] 赵争鸣, 袁立强, 鲁挺. 电力电子系统电磁瞬态过程[M]. 北京: 清华大学出版社, 2017. [9] 赵志斌, 邓二平, 张朋, 等. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017, 32(19): 125-133. Zhao Zhibin, Deng Erping, Zhang Peng, et al.Review of the difference between the press pack IGBT using for converter valve and for DC breaker[J]. Transa- ctions of China Electrotechnical Society, 2017, 32(19): 125-133. [10] 陈材, 裴雪军, 陈宇, 等. 基于开关瞬态过程分析的大容量变换器杂散参数抽取方法[J]. 中国电机工程学报, 2011, 31(21): 40-47. Chen Cai, Pei Xuejun, Chen Yu, et al.A stray parameter extraction method for high power converters based on turn-on/off transient analysis[J]. Proceedings of the CSEE, 2011, 31(21): 40-47. [11] 金祝锋, 李威辰, 胡斯登, 等. 大容量电力电子装置中母排杂散电感提取方法的优化研究[J]. 电工技术学报, 2017, 32(14): 1-7. Jin Zhufeng, Li Weichen, Hu Sideng, et al.Optimized stray inductance extraction method of bus bar in large- capacity power electronic equipment[J]. Transactions of China Electrotechnical Society, 2017, 32(14): 1-7. [12] Grover F W.Inductance calculations: working for mulas and tables[M]. New York, USA: Dover Publi- cations Inc, 2009. [13] Ruehli A E.An integral equation equivalent circuit solution to a large class of interconnect systems[D]. Burlington: The University of Vermont, 1972. [14] Ruehli A E.Inductance calculations in a complex integrated circuit environment[J]. IBM Journal of Research and Development, 1972, 16(5): 470-481. [15] Ruehli A, Antonini G, Jiang L.Circuit oriented electromagnetic modeling using the PEEC techni- ques[M]. New Jersey: Wiley-IEEE Press, 2017. [16] Hoer C, Love C.Exact inductance equations for rectangular conductors with applications to more complicated geometries[J]. Journal of Research of the National Bureau of Standards, 1965, 69C(2): 127-137. [17] 高飞, 陈维江, 李国富, 等. 基于完备集合思想的多导体部分电感计算方法[J]. 中国电机工程学报, 2011, 31(34): 127-134. Gao Fei, Chen Weijiang, Li Guofu, et al.Calculating method of multi-conductor partial inductance based on complete set[J]. Proceedings of the CSEE, 2011, 31(34): 127-134. [18] Ruehli A E, Antonini G, Jiang Linjun.Skin-effect loss models for time- and frequency-domain PEEC solver[J]. Proceedings of the IEEE, 2013, 101(2): 451-472. [19] Scholz P.Analysis and numerical modeling of inductively coupled antenna systems[D]. Darmstadt: Technische Universität Darmstadt, 2010. [20] Paul C.Inductance: loop and partial[M]. New Jersey: Wiley-IEEE Press, 2009. [21] 咸哲龙. 大尺寸导体阻抗频率特性的研究[D]. 北京: 清华大学, 2005. [22] Gradshteyn I S, Ryzhik I M.Table of integrals, series, and products[M]. 7th ed. California: Academic Press, 2007.
2020, Vol. 35 
