Dynamic Analysis of Inverter Based on High Voltage GaN High Electron Mobility Transistor
Zhang Yajing1, Trillion Q. Zheng2, Li Yan2
1. School of Information Science &Technology Beijing University of Chemical Technology Beijing 100029 China; 2. School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China
摘要 近年来随着氮化镓器件制造工艺的迅速发展,氮化镓高电子迁移率晶体管（GaN HEMT）已经开始应用在电力电子领域。GaN HEMT以其低寄生参数、无反向恢复损耗、高开通速度等特点,可降低开关管的开关损耗。本文以600V GaN HEMT为研究对象,研究其共源共栅（Cascode）结构引起的开关动态过程及其寄生参数的影响。建立了600V GaN HEMT等效模型并详细推导了其在单相逆变器中开关管正向导通、正向关断、反向续流导通和反向续流关断四种情况的动态过程。GaN HEMT的等效电路考虑了对开关过程及开关损耗有重要影响的寄生电感和寄生电容。理论、仿真及实验证明了Cascode GaN HEMT器件中寄生电感Lint1、Lint3和LS直接影响开关管的动态过程进而影响开关管的开关损耗。
Abstract：In recent years with the rapid development of the manufacturing process of GaN devices, gallium nitride high electron mobility transistor (GAN HEMT) has begun to apply in the field of power electronics. GaN HEMT has the characteristics of low parasitic parameters, no reverse recovery losses and high speed, which will reduce the switching losses of the device. Taken the 600V GaN HEMT as an example,this paper studied the switch dynamic process and the effects of parasitic caused by the cascode structure of the switch. This paper established a 600V GaN HEMT equivalent model, as well as derived the dynamic processes under four cases in a single phase inverter. The four cases are positive switch conduction, the forward turn off, reverse freewheeling turn on and reverse wheeling turn off. The equivalent circuit of GaN HEMT considers the parasitic inductance that has great impacts on the switching process and the switching loss. The effects of the parasitic parameters are identified and verified by simulation and experiment results. Lint1, Lint3 and LS directly affect the dynamic process of the switch and further affect the switching losses of the switch.
张雅静, 郑琼林, 李, 艳. 考虑寄生参数的高压GaN高电子迁移率晶体管的逆变器动态过程分析[J]. 电工技术学报, 2016, 31(12): 126-134.
Zhang Yajing, Trillion Q. Zheng, Li Yan. Dynamic Analysis of Inverter Based on High Voltage GaN High Electron Mobility Transistor. Transactions of China Electrotechnical Society, 2016, 31(12): 126-134.
[1] Lidow A, Strydom J, Rooij M de, et al. GaN tran- sistorsfor efficient power conversion[M]. El Seguno, CA: Power Conversion Publications, 2012. [2] 李艳, 张雅静, 郑琼林, 等. Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究[J].电工技术学报, 2015, 30(14): 298-303. Li Yan, Zhang Yajing, Trillion Q Zheng. Research on output volt-ampere characteristics of cascode GaN HEMT and its application in single-phase inverter[J]. Transaction of China Electrotechnical Society, 2015, 30(14): 298-303. [3] Tamura S, AndaY, Ishida M, et al. Recent advances in GaN power switching devices[C]//2010 IEEE Compound Semiconductor Integrated Circuit Sym- posium (CSICS), Monterey, CA, 2010: 1-4. [4] Nakajima A, Takao K, Ohashi H. GaN power transistor modeling for high-speed converter circuit design[J]. IEEE Transactions on Electron Devices, 2013, 60(2): 646-651. [5] Yang Bo, Lee F C, Zhang A J. et al. LLC resonant converter for front end DC/DC conversion[C]// Seventeenth Annual IEEE Applied Power Electronics Conference and Exposition, Dallas, TX, 2002, 2: 1108-1112. [6] 任小永, David Reusch, 季澍, 等. 氮化镓功率晶体管三电平驱动技术[J].电工技术学报, 2013, 28(5): 202-207. Ren Xiaoyong, David Reusch, Ji Shu, et al. Three- level driving method for GaN power transistor[J]. Transactions of China Electrotechnical Society, 2013, 28(5): 202-207. [7] Delaine J, Jeannin P O, Frey D, et al. Improvement of GaN transistors working conditions to increase efficiency of a 100W DC-DC converter[C]// Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013, 331: 656- 663. [8] 梁美, 郑琼林, 可翀, 等. SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50. Liang Mei, Trillion Q Zheng, Ke Chong, et al. Performance comparison of SiC MOSFET, Si Cool MOS and IGBT for DAB converter[J]. Transaction of China Electrotechnical Society, 2015, 30(12): 41-50. [9] Ishibashi T, Okamoto M, Hiraki E. Resonant gate driver for normally-on GaN high-electron-mobility transistor[C]//ECCE Asia Downunder (ECCE Asia), Melbourne, VIC, 2013: 365-371. [10] Wu Y F, Coffie R, Fichtenbaum N A, et al. Total GaN solution to electrical power conversion[C]// Device Research Conference (DRC), 2011 69th Annual DRC, Santa Barbara, CA, 2011: 217-218. [11] Scott M J, Zou K, Wang J, et al. A gallium-nitride switched-capacitor circuit using synchronous recti- fication[C]//Energy Conversion Congress and Exposition (ECCE), Phoenix, AZ, 2011: 2501-2505. [12] Zhang W, Xu Z, Zhang Z, et al. Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter[C]//Energy Conversion Congress and Exposition (ECCE), Denver, CO, 2013: 3571-3578. [13] Boutros K, Chu R, Hughes B. GaN power electronics for automotive application[C]//2012 IEEE Energy- tech, 2012: 1-4. [14] Liu Z, Huang X, Lee F C. Simulation model deve- lopment and verification for high voltage GaN HEMT in cascode structure[C]//Energy Conversion Congress and Exposition (ECCE), Denver, CO, 2013: 3579-3586. [15] 何骏伟, 陈思哲, 任娜, 等. 4500V碳化硅SBD和JFET功率模块的制备与测试[J]. 电工技术学报, 2015, 30(17): 63-69. He Junwei, Chen Sizhe, Ren Na. Fabrication and testing of 4500V SiC SBD and JFET power modules[J]. Transaction of China Electrotechnical Society, 2015, 30(17): 63-69.
2016, Vol. 31 
