摘要 近年来随着氮化镓器件制造工艺的迅速发展,氮化镓高电子迁移率晶体管（GaN HEMT）已经开始应用在电力电子领域。高压共源共栅（Cascode）GaN HEMT的出现使得GaN器件可以在高压场合进行应用。本文首先研究了耗尽型GaN HEMT及Cascode GaN HEMT全范围输出伏安特性及其特点。结合Si MOSFET 和耗尽型GaN HEMT的特性,本文重点研究了Cascode GaN HEMT的工作模态及其条件。最后,给出了500W基于600V Cascode GaN HEMT单相全桥逆变器的实验验证。实验结果和仿真验证证明了理论分析的正确性。
Abstract：In recent years with the rapid development of the manufacturing process of GaN devices, Gallium Nitride high electron mobility transistors (GaN HEMT) has begun to be applied in the field of power electronics. The appearance of the Cascode GaN HEMT makes it possible to apply GaN device in high voltage application. The output volt-ampere characteristics of the depletion mode GaN HEMT and Cascode GaN HEMT are investigated in detail, which is important for the operation mode of the Cascode GaN HEMT. This paper presents the steady-state operation mode for high voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a Cascode structure. The steady- state analysis is verified by a 500W single phase DC/AC inverter. Theoretical analysis is verified by simulation and experiment results.
李艳,张雅静,黄波,郑琼林,郭希铮. Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究[J]. 电工技术学报, 2015, 30(14): 295-303.
Li Yan,Zhang Yajing,Trillion Q. Zheng,Huang Bo,Guo Xizheng. Research on Output Volt-ampere Characteristics of Cascode GaN HEMT and Its Application in Single-phase Inverter. Transactions of China Electrotechnical Society, 2015, 30(14): 295-303.
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2015, Vol. 30 
