Optimal Design of High Frequency Boost Converter Based on GaN
Wang Zhongjie1, Wang Yifeng1, Chen Qing2, Chen Bo1, Wang Hao3
1. Key Laboratory of Smart Grid of Ministry of Education Tianjin University Tianjin 300072 China; 2. State Grid Jiangsu Electric Power Co. Ltd Nanjing 211000 China; 3. Tianjin Key Laboratory of Electrical and Electronic Technology Tiangong University Tianjin 300387 China
Abstract：This paper focuses on the key issue of improving the efficiency of synchronous rectification Boost topology. As one of the three working modes, Boost converter in boundary conduction mode can achieve zero voltage turn-on or valley turn-on of the main power switch as well as zero current turn-off of the freewheeling switch, which helps to improve the efficiency of the converter. In addition, the use of synchronous rectification technology can further reduce the conduction loss of traditional freewheeling diodes. Based on the parameter design in BCM mode, this paper focuses on the dead time configuration method of the converter. This method theoretically reduces the conduction loss of the internal body diode and further improves the efficiency of the converter when the output current is large. In addition, the main loss calculation method of Boost converter is summarized. Finally, using the GaN power switching device, an experimental prototype with a rated power of 500W was built, and its peak efficiency reached 98% and the power density reached 96W/in3. The design goals of high efficiency and high power density were achieved, and the accuracy and correctness of the theoretical analysis were verified.
王忠杰, 王议锋, 陈庆, 陈博, 王浩. 基于GaN的高频Boost变换器优化设计[J]. 电工技术学报, 2021, 36(12): 2495-2504.
Wang Zhongjie, Wang Yifeng, Chen Qing, Chen Bo, Wang Hao. Optimal Design of High Frequency Boost Converter Based on GaN. Transactions of China Electrotechnical Society, 2021, 36(12): 2495-2504.
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2021, Vol. 36 
